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| Experimental Study on Conduction Device in Silicothermic Reduction Pot and Numerical Simulation |
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| DOI：doi：10.3969/j.issn.1007-7545.年份.期号.顺序号 |
| KeyWord:Conduction device ; Reduction pot; Silicothermic ; Numerical-simulation |
| SU Ming,XIE Shui-sheng,YAN Liang,XU He,DU Feng-shan |
| 1. The College of Mechanical Engineering, Yanshan University, Qinthuangdao 066004, China;2. Beijing Winca Corporation, Beijing 100088, China |
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| Abstract: |
| The temperature curve of the point in the central axis of reduction pot is analyzed, the necessity of fixing the conduction device in the pot is brought forward. Then, the mode of the device is designed. It is improved by experiment. Thermal conduction effect and magnesium crystal are verified by experiment. Thermal field of fixed the conduction device is simulated by ANSYS, the time of the center temperature up to the reaction temperature is calculated, which is compared with the thermal field of the unfixed. |
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