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Study on Silicon Extraction with Balanced Cooling Method |
Received:November 06, 2012 Revised:November 08, 2012 |
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DOI:10.3969/j.issn.1007-7545.2013.04.007 |
KeyWord:high-silicon aluminum alloy; balanced cooling method; primary silicon; extraction |
Author | Institution |
WU Dong-xu |
兰州理工大学 有色金属合金及加工教育部重点实验室 甘肃 兰州 |
YAN Feng-yun |
兰州理工大学 有色金属合金及加工教育部重点实验室 甘肃 兰州;兰州理工大学 甘肃省有色金属新材料省部共建国家重点实验室 甘肃 兰州 |
WANG Shuo |
兰州理工大学 甘肃省有色金属新材料省部共建国家重点实验室 甘肃 兰州 |
SHAO Jing-tao |
兰州理工大学 甘肃省有色金属新材料省部共建国家重点实验室 甘肃 兰州 |
FAN Zhi-bin |
兰州理工大学 甘肃省有色金属新材料省部共建国家重点实验室 甘肃 兰州 |
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Abstract: |
The optimum conditions for silicon extraction with balanced cooling method were studied. In solidification process, the effects of holding temperature, holding time interval, cooling range and stirring speed on the growth and distribution law of primary silicon were investigated. The extraction rates under different terminal temperature and in different stirring situations were compared. The results show that the average diameter of silicon particle is 0.466 mm, the proportion of particle size >3.35 mm reaches 20.2% under the conditions including holding temperature of 900 ℃, cooling range of 10 ℃ and holding time interval of 20 min. Meanwhile, the extraction rate of silicon is up to 44.3% when stirring speed is 50 r/min and terminal temperature is 640 ℃. |
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