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| Improvement on Rectification Process of Polycrystalline Silicon by Improved Siemens Process |
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Received:March 13, 2013
Revised:March 14, 2013
Accepted:March 15, 2013
Published Online:August 22, 2013
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| DOI：10.3969/j.issn.1007-7545.2013.09.015 |
| KeyWord:polycrystalline silicon; Siemens process; impurity; rectification; process; improvement |
| Author | Institution |
| liugang |
青海黄河上游水电开发有限责任公司新能源分公司 |
| qinrong |
青海黄河上游水电开发有限责任公司新能源分公司、中国科学院青海盐湖研究所 |
| liushengzhang |
青海黄河上游水电开发有限责任公司新能源分公司、中国科学院青海盐湖研究所 |
| wangshuya |
青海盐湖研究所 |
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| Abstract: |
| Improved Siemens process was widely used by polycrystalline silicon manufacturers home and abroad. The trichlorosilane distillation process comprised of three rectification towers was improved. The results show that boron and phosphorus contents in trichlorosilane are further reduced by improved four rectification towers distillation process. The purity of final product of high-purity trichlorosilane can reach 99.999%. |
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