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| Comprehensive Utilization of Silicon Tetrachloride By-product of Polycrystalline Silicon |
| Received:March 15, 2013 Revised:March 18, 2013 |
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| DOI：10.3969/j.issn.1007-7545.2013.08.007 |
| KeyWord:silicon tetrachloride; silicon nitride; polycrystalline silicon; comprehensive utilization |
| Author | Institution |
| Liu Gang |
青海黄河上游水电开发有限责任公司新能源分公司 |
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| Abstract: |
| The thermodynamic analysis of chemical reactions in silicon nitride CVD synthesis system from silicon tetrachloride was carried out with Gibbs free energy theory. The results show that silicon nitride synthesized at 1 500 K above has a higher purity. The source and main impurities of silicon tetrachloride are compared. Silicon tetrachloride is comprehensively utilized by the processes including removal of phosphorus trichloride from SiCl4 (Ⅰ) in silicon tetrachloride rectification tower and synthesis of silicon nitride in synthesizing tower from SiCl4 (Ⅰ), SiCl4 (Ⅱ) and SiCl4 (Ⅲ). |
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