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| Effect of Annealing Temperature on Structure and Resistivity of LaNiO3 Film |
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Received:May 14, 2013
Revised:May 16, 2013
Accepted:May 17, 2013
Published Online:October 25, 2013
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| DOI：10.3969/j.issn.1007-7545.2013.11.015 |
| KeyWord:LaNiO3; film; annealing temperature; resistivity |
| Author | Institution |
| Feng Zhiqi |
兰州理工大学材料学院;兰州理工大学甘肃省有色金属新材料省部共建国家重点实验室 |
| Dai Peihua |
兰州理工大学甘肃省有色金属新材料省部共建国家重点实验室 |
| Xi Bo |
兰州理工大学甘肃省有色金属新材料省部共建国家重点实验室 |
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| Abstract: |
| LaNiO3 thin films were prepared on Si(111) with radio frequency magnetron sputtering (RFMS) method and characterized by XRD and SEM. The results show that a certain degree of preferred orientation appears in LaNiO3 film under unannealed state. The higher the annealing temperature in air is, the better the film’s crystallinity is, and perovskite type structure occurs. When the annealing temperature reaches 900 ℃, a hetero phase occurs, and the surface morphology changes dramatically due to decomposition of LaNiO3. The resistivity is closely linked with oxygen vacancies in the structure. The higher the annealing temperature is, the less the oxygen vacancies and the resistivity are. The minimum resistivity of 1.59 Ω?cm is obtained in film when annealed at 700 ℃. |
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