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| Study on Electrodeposition of Silicon in SiCl4/TMAC-PC Systerm |
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Received:December 29, 2014
Revised:January 05, 2015
Accepted:January 06, 2015
Published Online:April 21, 2015
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| DOI：10.3969/j.issn.1007-7545.2015.05.017 |
| KeyWord:ionic liquid; electro-deposition; silicon |
| Author | Institution |
| Zhangyuehong |
东北大学秦皇岛分校 |
| liyaqiong |
大连理工大学 |
| libinchuan |
东北大学秦皇岛分校 |
| guorui |
东北大学秦皇岛分校 |
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| Abstract: |
| Cathodic deposition process of silicon in SiCl4/TMAC-PC system was analyzed by electrical conductivity and thermal stability of electrolyte system. The effect of current density, temperature and etc. on surface morphology of deposited layer were studied. The results show that thermal stability of TMAC-PC system is enhanced by SiCl4 addition and electrical conductivity of electrolyte rises with increase of temperature. The sphere shape and densification deposited layer are formed under the conditions including temperature of 328 K, c(SiCl4)=0.5 mol/L, current density of 15 A/m2 and deposition time of 3h. |
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