Study on Electrodeposition of Silicon in SiCl4/TMAC-PC Systerm
Received:December 29, 2014  Revised:January 05, 2015
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DOI:10.3969/j.issn.1007-7545.2015.05.017
KeyWord:ionic liquid; electro-deposition; silicon
           
AuthorInstitution
Zhangyuehong 东北大学秦皇岛分校
liyaqiong 大连理工大学
libinchuan 东北大学秦皇岛分校
guorui 东北大学秦皇岛分校
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Abstract:
      Cathodic deposition process of silicon in SiCl4/TMAC-PC system was analyzed by electrical conductivity and thermal stability of electrolyte system. The effect of current density, temperature and etc. on surface morphology of deposited layer were studied. The results show that thermal stability of TMAC-PC system is enhanced by SiCl4 addition and electrical conductivity of electrolyte rises with increase of temperature. The sphere shape and densification deposited layer are formed under the conditions including temperature of 328 K, c(SiCl4)=0.5 mol/L, current density of 15 A/m2 and deposition time of 3h.
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