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| Effect of Annealing Temperature on Performance of CZTS Thin Films Prepared via Metal Targets Sequential Sputtering Followed by Sulfuration Technology |
| Received:August 17, 2017 Revised:August 26, 2017 |
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| DOI：doi：10.3969/j.issn.1007-7545.2018.01.016 |
| KeyWord:sulfide annealing; annealing temperature; CZTS film; crystallization property |
| Author | Institution |
| liu yike |
贵州理工学院材料与冶金工程学院 |
| tang yaqin |
贵州理工学院材料与冶金工程学院 |
| zhang kun |
中南大学冶金与环境学院 |
| jiang liangxing |
中南大学冶金与环境学院 |
| liu fangyang |
中南大学冶金与环境学院 |
| lai yanqing |
中南大学冶金与环境学院 |
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| Abstract: |
| The effects of temperature of sulfide annealing on properties of CZTS thin films based on sequential sputtering from three metal targets were systematically studied by XRD, Raman, SEM, and EDS. The results show that crystallization and morphology of film are enhanced with increase of annealing temperature from 500 ℃ to 580 ℃, but decomposition reaction of CZTS film occurs at 600 ℃, which not only deteriorates crystallization and morphology of film, but also cause losing of Sn element. The optimum sulfide annealing temperature is 580 ℃. |
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