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| Stripping of Hf and Zr from Loaded Organic Phase of DIBK-P350 and DIBK-TOPO |
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Received:November 08, 2017
Revised:November 14, 2017
Accepted:November 15, 2017
Published Online:April 16, 2018
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| DOI：doi：10.3969/j.issn.1007-7545.2018.05.010 |
| KeyWord:stripping; loaded organic phase; hafnium; zirconium; DIBK; P350; TOPO |
| Author | Institution |
| zhang weng jie |
武汉工程大学绿色化工过程教育部重点实验室 |
| wu ming |
中南民族大学催化材料科学国家民委-教育部暨湖北省重点实验室 |
| XU Zhi-gao |
武汉工程大学绿色化工过程教育部重点实验室;中南民族大学催化材料科学国家民委-教育部暨湖北省重点实验室 |
| he zheng yan |
中南民族大学催化材料科学国家民委-教育部暨湖北省重点实验室 |
| li pan hong |
武汉工程大学绿色化工过程教育部重点实验室 |
| zhao jun |
武汉工程大学绿色化工过程教育部重点实验室 |
| chi ru an |
武汉工程大学绿色化工过程教育部重点实验室 |
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| Abstract: |
| Back-extraction property of different stripping agents was studied to strip hafnium and zirconium from loaded organic phase of DIBK-P305 system and DIBK-TOPO system respectively. The results show that hydrochloric acid, sulfuric acid, ammonium bicarbonate or potassium carbonate cannot be used as stripping agent for synergistic extraction system due to low stripping rate or separation factor. (NH4)2CO3 solvent shows better back-extraction property to strip hafnium and zirconium from loaded organic phase. Single-stage stripping rate of hafnium and separation factor between hafnium and zirconium in DIBK-P350 system is 91.61% and 6.94 respectively under the optimum conditions including room temperature, O/A=1/2, and (NH4)2CO3concentration of 1.5~2.0 mol/L. Single-stage stripping rate of hafnium and separation factor between hafnium and zirconium in DIBK-TOPO system is 94.33% and 15.30 respectively under the optimum conditions including room temperature, O/A=1/2, and (NH4)2CO3concentration of 2.0 mol/L. |
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