Influence of MgO Layer on Magnetic Anisotropy of FeN-based Composite Films
Received:July 11, 2018   Revised:July 16, 2018   Accepted:July 17, 2018      Published Online:September 19, 2018
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DOI:doi:10.3969/j.issn.1007-7545.2018.10.017
KeyWord:FeN alloy; film materials; magnetic anisotropy; interfacial tunability
  
AuthorInstitution
MEI Xue-zhen 北京矿冶科技集团有限公司
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Abstract:
      Effect of inserting MgO layers on magnetic anisotropy energy and interfacial electronic structure of FeN alloy films was investigated. The results show that by depositing MgO layer above FeN layer, an effective Fe-O orbital hybridization is introduced at FeN/MgO interface, which favors to enhance magnetic anisotropy energy (Keff) and promote perpendicular magnetic anisotropy. However, with deposition of MgO layer below FeN layer, the epitaxial growth between Cr and FeN lattice is destructed, resulting in an obvious Keff decrement and magnetic anisotropy destruction.
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