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| Electrical Transport Properties of Ce-Doped Double Perovskite Oxide Gd2NiMnO6 |
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Received:March 19, 2019
Revised:March 21, 2019
Accepted:March 22, 2019
Published Online:July 15, 2019
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| DOI：doi：10.3969/j.issn.1007-7545.2019.08.014 |
| KeyWord:double perovskite; Gd2NiMnO6; electrical transport property; conductive mechanism |
| Author | Institution |
| lixiaoxin |
包头师范学院物理科学与技术学院 |
| liujiao |
包头师范学院物理科学与技术学院 |
| wangting |
包头师范学院物理科学与技术学院 |
| tianye |
包头师范学院物理科学与技术学院 |
| xingru |
包头师范学院物理科学与技术学院 |
| sunyunbin |
包头师范学院物理科学与技术学院 |
| zhaojianjun |
包头师范学院物理科学与技术学院 |
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| Abstract: |
| Polycrystalline samples of double perovskite oxide Gd(2-x)CexNiMnO6(x=0,0.1,0.2,0.3) were prepared by traditional high temperature solid phase reaction method. Structure and electrical transport properties of samples were studied with XRD spectrum and value of ρ-T curves. The results show that all the samples in this group present good pure-phase, belong to monoclinic crystal system, and space group is P21/n. This group of samples is made of semiconductor materials and is not conducive to electrical conduction with existence of magnetic field. Conductivity is improved with doping of Ce element. In temperature measurement region, high concentration of Ce doping changes conduction mode, and conduction mechanism changes from variable-range jumping mode to thermal activation mode. |
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