Research Progress of Electrodeposited Silicon Technology at Low Temperature
Received:April 09, 2019   Revised:May 09, 2019   Accepted:May 10, 2019      Published Online:September 23, 2019
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DOI:doi:10.3969/j.issn.1007-7545.2019.10.015
KeyWord:low temperature; electrodeposition; silicon; technology; process
        
AuthorInstitution
WU Liang 上海大学理学院物理系
ZHAO Zhan-xia 上海大学理学院物理系
ZHANG Cheng-long 上海第二工业大学电子废弃物研究中心
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Abstract:
      Traditional preparation processes of silicon mainly include Czochralski, zone melting and vapor deposition method. Operation of these methods needs high temperature, large-scale equipments, complicated operation and high cost. Electrodeposited silicon at low temperature is favored by researchers due to its advantages of simple, controllable and low-cost preparation. Research status of low temperature electrodeposited silicon process is comprehensive overviewed, including selection of electrode and solvent, and electrodeposition method. Furthermore, Problems and development trends of low temperature electrodeposited silicon are discussed.
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