|
| Study on Indium Leaching and Silicon Precipitation from Indium-Rich High-Silicon Bearing Slag during Oxygen Pressure Acid Leaching |
|
Received:September 05, 2019
Revised:September 09, 2019
Accepted:September 10, 2019
Published Online:December 18, 2019
|
| View Full Text View/Add Comment Download reader |
| DOI：doi：10.3969/j.issn.1007-7545.2020.01.012 |
| KeyWord:indium-rich slag; oxygen pressure acid leaching; silica gel; leaching rate |
| Author | Institution |
| Shanming He |
江西理工大学 冶金工程学院 |
| Xin Wu |
江西理工大学 冶金工程学院 |
| Yong Liang |
江西理工大学 冶金工程学院 |
| Chunfa Liao |
江西理工大学 冶金工程学院 |
|
| Hits: 3251 |
| Download times: 1726 |
| Abstract: |
| Indium-rich slag was treated by oxygen pressure acid leaching process. Effects of initial acid concentration, pressure in autoclave, temperature, time and L/S on indium leaching and silicon precipitation were investigated. The results show that indium leaching rate is 97.3% and silicon precipitation rate is 98.5% under the conditions including initial acid concentration of 120 g/L, L/S=5/1, pressure in autoclave of 0.6 MPa, reaction temperature of 160 ℃,and reaction time of 1.5 h. High pressure and high temperature process can inhibit formation of silica gel during acid leaching of indium-rich slag, and leaching slurry has good filtration performance. |
| Close |