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| Influence of Crystal Morphology on Impurity Distribution during Directional Solidification Induced by Electron Beam |
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Received:December 20, 2020
Revised:December 28, 2020
Accepted:December 29, 2020
Published Online:May 20, 2021
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| DOI：doi：10.3969/j.issn.1007-7545.2021.06.015 |
| KeyWord:silicon; electron beam; directional solidification; crystal; impurity |
| Author | Institution |
| REN Shi-qiang |
聊城大学 医学院 |
| HU Zhi-qiang |
大连理工大学材料科学与工程学院 |
| LI Peng-ting |
大连理工大学 材料科学与工程学院 |
| ZHAO Xing-chuan |
聊城大学 材料科学与工程学院 |
| JIANG Da-chuan |
大连理工大学 材料科学与工程学院 |
| MA Shuai |
聊城大学 医学院 |
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| Abstract: |
| Under industrial condition, silicon scraps were purified through directional solidification induced by electron beam for recycling. There were two crystal morphologies (monocrystalline and columnar) in silicon ingot. Compared with polycrystalline region, distribution of electrical properties such as resistivity and minority carrier life time in monocrystalline region was more uniform, and content of iron impurities was also more uniform with an average value of mass fraction of 0.000031%. Appearance of monocrystalline crystals during directional solidification induced by electron beam can not only ensure uniform composition of metal impurities in ingot purification area, but also further promote concentration of impurities towards top of ingot, and content of iron impurities on top of ingot is up to 0.101%. Therefore, it is possible to use electron beam to induce monocrystalline growth, which will promote removal of metal impurity and provide a way for regeneration of recycled silicon. |
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